Effects of Br and Cl on organometallic vapor phase epitaxial growth and ordering in GaInP
Identifieur interne : 00A735 ( Main/Repository ); précédent : 00A734; suivant : 00A736Effects of Br and Cl on organometallic vapor phase epitaxial growth and ordering in GaInP
Auteurs : RBID : Pascal:04-0097112Descripteurs français
- Pascal (Inist)
- 8115K, 7866F, 7855C, 8105E, 6835B, 6855A, Etude expérimentale, Gallium composé, Indium composé, Brome, Chlore, Semiconducteur III-V, Croissance semiconducteur, Couche épitaxique semiconductrice, Epitaxie phase vapeur, Agent surface, Photoluminescence, Reconstruction surface, Morphologie surface, Surface rugueuse, Microscopie électronique transmission, Microscopie force atomique.
- Wicri :
English descriptors
- KwdEn :
- Atomic force microscopy, Bromine, Chlorine, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Photoluminescence, Rough surfaces, Semiconductor epitaxial layers, Semiconductor growth, Surface morphology, Surface reconstruction, Surfactants, Transmission electron microscopy, VPE, surface roughness.
Abstract
CuPt ordering in GaInP has significant effects on the electrical and optical properties. In fact, band gap reductions as large as 160 meV are potentially useful for devices. Thus, control of ordering is important. This has led to the investigation of surfactants that affect the surface processes during growth with little incorporation into the solid. A potentially interesting class of surfactant elements are those from group VII, that are known not to be incorporated during growth, but to change the dynamics of surface processes. This article describes the results of the addition of Cl and Br during the organometallic vapor phase epitaxial growth of GaInP. The addition of Br in small concentrations is observed to systematically decrease the amount of CuPt ordering observed directly via transmission electron diffraction and photoluminescence measurements. A ratio of Br/III of 0.042 is found to virtually eliminate ordering. The reduction in order parameter is not found to correspond to a decrease in the 405 nm peak measured during in situ surface photoabsorption measurements. This indicates that a change in surface reconstruction is not responsible for the decrease in order parameter. However, both Cl and Br are found to significantly roughen the surface morphology. Atomic force microscopy shows that facets are formed that increase in height and angle to the (001) growth surface as the surfactant concentration increases. This is postulated to be the origin of the reduction in order parameter, since previous studies have indicated that an intentional misorientation of the substrate in either the A or B direction leads to a decrease in order parameter. © 2004 American Institute of Physics.
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Rieth</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Chapman, D C" uniqKey="Chapman D">D. C. Chapman</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Wixom, R R" uniqKey="Wixom R">R. R. Wixom</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Stringfellow, G B" uniqKey="Stringfellow G">G. B. Stringfellow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Kim, B J" uniqKey="Kim B">B. J. Kim</name><affiliation><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712 Korea</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Seong, T Y" uniqKey="Seong T">T. Y. Seong</name><affiliation><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712 Korea</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0097112</idno><date when="2004-03-01">2004-03-01</date><idno type="stanalyst">PASCAL 04-0097112 AIP</idno><idno type="RBID">Pascal:04-0097112</idno><idno type="wicri:Area/Main/Corpus">00BE86</idno><idno type="wicri:Area/Main/Repository">00A735</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Bromine</term><term>Chlorine</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Rough surfaces</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Surface morphology</term><term>Surface reconstruction</term><term>Surfactants</term><term>Transmission electron microscopy</term><term>VPE</term><term>surface roughness</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115K</term><term>7866F</term><term>7855C</term><term>8105E</term><term>6835B</term><term>6855A</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Brome</term><term>Chlore</term><term>Semiconducteur III-V</term><term>Croissance semiconducteur</term><term>Couche épitaxique semiconductrice</term><term>Epitaxie phase vapeur</term><term>Agent surface</term><term>Photoluminescence</term><term>Reconstruction surface</term><term>Morphologie surface</term><term>Surface rugueuse</term><term>Microscopie électronique transmission</term><term>Microscopie force atomique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Brome</term><term>Chlore</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuPt ordering in GaInP has significant effects on the electrical and optical properties. In fact, band gap reductions as large as 160 meV are potentially useful for devices. Thus, control of ordering is important. This has led to the investigation of surfactants that affect the surface processes during growth with little incorporation into the solid. A potentially interesting class of surfactant elements are those from group VII, that are known not to be incorporated during growth, but to change the dynamics of surface processes. This article describes the results of the addition of Cl and Br during the organometallic vapor phase epitaxial growth of GaInP. The addition of Br in small concentrations is observed to systematically decrease the amount of CuPt ordering observed directly via transmission electron diffraction and photoluminescence measurements. A ratio of Br/III of 0.042 is found to virtually eliminate ordering. The reduction in order parameter is not found to correspond to a decrease in the 405 nm peak measured during in situ surface photoabsorption measurements. This indicates that a change in surface reconstruction is not responsible for the decrease in order parameter. However, both Cl and Br are found to significantly roughen the surface morphology. Atomic force microscopy shows that facets are formed that increase in height and angle to the (001) growth surface as the surfactant concentration increases. This is postulated to be the origin of the reduction in order parameter, since previous studies have indicated that an intentional misorientation of the substrate in either the A or B direction leads to a decrease in order parameter. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>95</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effects of Br and Cl on organometallic vapor phase epitaxial growth and ordering in GaInP</s1></fA08><fA11 i1="01" i2="1"><s1>HOWARD (A. D.)</s1></fA11><fA11 i1="02" i2="1"><s1>RIETH (L. W.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHAPMAN (D. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>WIXOM (R. R.)</s1></fA11><fA11 i1="05" i2="1"><s1>STRINGFELLOW (G. B.)</s1></fA11><fA11 i1="06" i2="1"><s1>KIM (B. J.)</s1></fA11><fA11 i1="07" i2="1"><s1>SEONG (T. Y.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Kwangju 506-712 Korea</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>2319-2323</s1></fA20><fA21><s1>2004-03-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0097112</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>CuPt ordering in GaInP has significant effects on the electrical and optical properties. 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The reduction in order parameter is not found to correspond to a decrease in the 405 nm peak measured during in situ surface photoabsorption measurements. This indicates that a change in surface reconstruction is not responsible for the decrease in order parameter. However, both Cl and Br are found to significantly roughen the surface morphology. Atomic force microscopy shows that facets are formed that increase in height and angle to the (001) growth surface as the surfactant concentration increases. 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